Metal-free frame design for silicon bridges for semiconductor packages

ABSTRACT

Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semi-conductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This patent application is a U.S. National Phase Application under 35U.S.C. § 371 of International Application No. PCT/US 2015/058074, filledOct. 29, 2015, entitled “METAL FREE FRAME DESIGN FOR SILICON BRIDGES FORSEMICONDOCTOR PACKAGES ,”which designates the United State of America,the entire disclosure of which is hereby incorporated by reference inits entirety and for all purposes.

TECHNICAL FIELD

Embodiments of the invention are in the field of semiconductor packagesand, in particular, metal-free frame designs for silicon bridges forsemiconductor packages and the resulting silicon bridges andsemiconductor packages.

BACKGROUND

Today's consumer electronics market frequently demands complex functionsrequiring very intricate circuitry. Scaling to smaller and smallerfundamental building blocks, e.g. transistors, has enabled theincorporation of even more intricate circuitry on a single die with eachprogressive generation. Semiconductor packages are used for protectingan integrated circuit (IC) chip or die, and also to provide the die withan electrical interface to external circuitry. With the increasingdemand for smaller electronic devices, semiconductor packages aredesigned to be even more compact and must support larger circuitdensity. Furthermore, the demand for higher performance devices resultsin a need for an improved semiconductor package that enables a thinpackaging profile and low overall warpage compatible with subsequentassembly processing.

C4 solder ball connections have been used for many years to provide flipchip interconnections between semiconductor devices and substrates. Aflip chip or Controlled Collapse Chip Connection (C4) is a type ofmounting used for semiconductor devices, such as integrated circuit (IC)chips, MEMS or components, which utilizes solder bumps instead of wirebonds. The solder bumps are deposited on the C4 pads, located on the topside of the substrate package. In order to mount the semiconductordevice to the substrate, it is flipped over—the active side facing downon the mounting area. The solder bumps are used to connect thesemiconductor device directly to the substrate.

Processing a flip chip is similar to conventional IC fabrication, with afew additional steps. Near the end of the manufacturing process, theattachment pads are metalized to make them more receptive to solder.This typically consists of several treatments. A small dot of solder isthen deposited on each metalized pad. The chips are then cut out of thewafer as normal. To attach the flip chip into a circuit, the chip isinverted to bring the solder dots down onto connectors on the underlyingelectronics or circuit board. The solder is then re-melted to produce anelectrical connection, typically using an ultrasonic or alternativelyreflow solder process. This also leaves a small space between the chip'scircuitry and the underlying mounting. In most cases anelectrically-insulating adhesive is then “underfilled” to provide astronger mechanical connection, provide a heat bridge, and to ensure thesolder joints are not stressed due to differential heating of the chipand the rest of the system.

Newer packaging and die-to-die interconnect approaches, such as throughsilicon via (TSV), silicon interposers and silicon bridges, are gainingmuch attention from designers for the realization of high performanceMulti-Chip Module (MCM) and System in Package (SiP).

However, additional improvements are needed for such newer packagingregimes.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a cross-sectional view of a semiconductor packagehaving an Embedded Multi-die Interconnect Bridge (EMIB) connectingmultiple dies, in accordance with an embodiment of the presentinvention.

FIG. 1B illustrates a plan view showing the bump arrays of the first andsecond dies of FIG. 1A, in accordance with an embodiment of the presentinvention.

FIG. 2 illustrates a plan view of a portion of a silicon wafer having aplurality of silicon bridge dies fabricated thereon, in accordance withan embodiment of the present invention.

FIG. 3 illustrates an exemplary layout for adjacent silicon bridge dieson a common substrate or wafer, in accordance with an embodiment of thepresent invention.

FIG. 4 illustrates a magnified plan view of a portion of a siliconbridge die including a crack formed therein, in accordance with anembodiment of the present invention.

FIG. 5 illustrates a cross-sectional view of a guard ring of a dualguard ring structure, in accordance with an embodiment of the presentinvention.

FIG. 6 illustrates a cross-sectional view of a dual guard ringstructure, in accordance with an embodiment of the present invention.

FIG. 7 illustrates a cross-sectional view of a semiconductor packageincluding multiple die coupled with an embedded multi-die interconnectbridge (EMIB), in accordance with an embodiment of the presentinvention.

FIG. 8 illustrates a plan view of a package layout for co-packaged highperformance computing (HPC) die and high bandwidth memory (HBM) layout,in accordance with an embodiment of the present invention.

FIG. 9 is a flowchart illustrating operations in a method of fabricatinga plurality of silicon bridge dies, in accordance with an embodiment ofthe present invention.

FIG. 10 is a schematic of a computer system, in accordance with anembodiment of the present invention.

DESCRIPTION OF THE EMBODIMENTS

Metal-free frame designs for silicon bridges for semiconductor packagesand the resulting silicon bridges and semiconductor packages aredescribed. In the following description, numerous specific details areset forth, such as packaging and interconnect architectures, in order toprovide a thorough understanding of embodiments of the presentinvention. It will be apparent to one skilled in the art thatembodiments of the present invention may be practiced without thesespecific details. In other instances, well-known features, such asspecific semiconductor fabrication processes, are not described indetail in order to not unnecessarily obscure embodiments of the presentinvention. Furthermore, it is to be understood that the variousembodiments shown in the Figures are illustrative representations andare not necessarily drawn to scale.

One or more embodiments described herein are directed to metal-freeframe designs for silicon (Si) bridges. Applications may be particularlyuseful for so-called 2.5D packaging designs. As used throughout the term“silicon bridge” is used to refer to a die providing routing for two ormore device dies. The term “Embedded Multi-die Interconnect Bridge(EMIB)” refers to the inclusion of such a silicon bridge die in apackage substrate, or the resulting package.

To provide context, Embedded Multi-die Interconnect Bridge (EMIB)technology is being used and/or evaluated for applications such as thecombination of high performance computing (HPC) with high bandwidthmemory (HBM). Silicon bridge technology often involves the use of a verythick metal stack-up, typically totaling about 20 microns or more ofmetal to reduce electrical resistance otherwise associated withconventional signal routing. The silicon bridge dies may be fabricatedfrom a wafer having a plurality of such dies thereon. As such, dicing ofthe wafer is necessary to singulate the silicon bridge dies. However,conventional use of a laser scribe process prior to a saw cut may not bepossible for silicon bridge technology due to thick copper (Cu) metallayers present in the stack, including in the scribe lines of the wafer.Furthermore, it has proven very challenging to handle and cut ultra-thinsilicon bridge wafers without an initial laser scribe. For example,removal of a laser scribe operation from the singulation process oftenleads to the formation of small die cracks.

Addressing one or more of the above described issues, embodimentsdescribed herein are directed to the fabrication and use of dual guardrings and a scribe line (street) metal free zone frame design. Such adesign may be implemented to minimize and/or reduce die crackpropagation. In an embodiment, such a frame design further involvesseparation of the two guard rings in the dual guard ring design in orderto include staggered metal layer dummification between the two hermeticsealing guard rings. The overall design may be implemented to providemaximum protection for die crack propagation, particularly duringsingulation of a wafer having a plurality of silicon bridge dies.

To provide further context, conventional frame or (street) designs thatare targeted to protect possible die crack propagation and moisturepenetration often include the use of two guard rings positioned side byside with a metal-meshed moat structure in the scribe line. Dicing ofsuch structures typically involves laser scribing of the moat area tominimize die damage during the saw cut process. However, as describedabove, silicon bridge technology may not be amenable to use of side byside guard rings together with a moat since laser scribing due to thepresence of relatively thick copper metal layers. Furthermore, laserscribing processing in general can be very expensive.

In accordance with one or more embodiments described herein, a framedesign for a wafer of silicon bridges dies includes, for each individualdie, a first (outer) guard ring in close proximity to a saw cut area,providing initial protection during dicing. A second (inner) guard ringis located around the die edge. A staggered metal array is placedbetween the inner and outer guard rings. One or more cracks thatpropagate through the outer guard ring during (or after) a singulationprocess may be terminated in the staggered metal array located betweenthe inner and outer guard rings.

Providing a high level overview of the concepts described herein, FIG.1A illustrates a cross-sectional view of a semiconductor package havingan Embedded Multi-die Interconnect Bridge (EMIB) connecting two dies, inaccordance with an embodiment of the present invention. Referring toFIG. 1A, a semiconductor package 100 includes a first die 102 (e.g., amemory die) and a second die 104 (e.g., a logic, CPU or SoC die). Thefirst die 102 and second die 104 are coupled to a silicon bridge 106through bumps 108 and 110 of the first die 102 and second die 104,respectively, and bond pads 112A and 112B (also referred to asconductive pads 112A and 112B) of the silicon bridge 106, e.g., bythermal compression bonding (TCB).

The first die 102 and second die 104 are disposed on a package substrate114.

The package substrate 114 includes metallization layers 116 (e.g.,vertical arrangement of lines and vias) formed in insulating layers 118.The metallization layers 116 layers may be simple or complex and may befor coupling to other packages or may form part or all of an organicpackage or printed circuit board (PCB), etc. The first die 102 andsecond die 104 may each be coupled directly to the package substrate 114through bumps 108B and 110B, respectively, as is depicted in FIG. 1A.FIG. 1B illustrates a plan view showing the bump arrays 108A, 108B, 110Aand 110B of the first 102 and second 104 dies of FIG. 1A.

Referring again to FIG. 1A, the silicon bridge 106 as depicted isreferred to as an Embedded Multi-die Interconnect Bridge (EMIB) since itis included with the layers of the package substrate 114. In anotherembodiment, such a silicon bridge 106 is not embedded in the package,but rather in an open cavity of a substrate or board. In either case, inan embodiment, and as will be described in greater detail below, thesilicon bridge 106 includes a silicon substrate having an insulatinglayer disposed thereon, the silicon substrate having a perimeter 118. Ametallization structure is disposed on the insulating layer, themetallization structure including conductive routing disposed in adielectric material stack. A first metal guard ring is disposed in thedielectric material stack and surrounds the conductive routing. A secondmetal guard ring is disposed in the dielectric material stack andsurrounds the first metal guard ring. A metal-free region 120 of thedielectric material stack surrounds the second metal guard ring. Themetal-free region 120 is disposed adjacent to the second metal guardring and adjacent to the perimeter 118 of the silicon substrate. In oneembodiment, the silicon substrate of the silicon bridge 106 is free fromhaving semiconductor devices disposed therein (i.e., the silicon bridgeprovides routing layers only, and not active semiconductor devices).

In one embodiment, at least one of the first metal guard ring or thesecond metal guard ring of the silicon bridge 106 provides a hermeticseal for the metallization structure of the silicon bridge. In oneembodiment, the silicon bridge 106 further includes metal featuresdisposed in the dielectric material stack, between the first metal guardring and the second metal guard ring, the metal features including afeature such as, but not limited to, an alignment mark, a dummy feature,or a test feature. In one embodiment, at least one of the first metalguard ring or the second metal guard ring of the silicon bridge 106includes a vertical stack of alternating metal lines and vias alignedalong a common axis.

Referring again to FIG. 1A, the first 102 and second 104 adjacentsemiconductor dies are disposed on the semiconductor package substrate114 and electrically coupled to one another by the conductive routing ofthe metallization structure of the silicon bridge 106. In oneembodiment, the first semiconductor die 102 is a memory die, and thesecond semiconductor die 104 is a logic die. The first semiconductor die102 is attached to the first plurality of conductive pads 112A of thesilicon bridge 106, and the second semiconductor die 104 is attached tothe second plurality of conductive pads 112B of the silicon bridge 106.In one embodiment, the conductive routing of the silicon bridge 106electrically couples the first plurality of conductive pads 112A withthe second plurality of conductive pads 112B. In one embodiment, thefirst 112A and second 112B pluralities of conductive pads of the siliconbridge 106 include a layer of copper having a thickness of greater thanapproximately 5 microns.

As described above, a plurality of silicon bridge dies may be fabricatedon a common silicon wafer which ultimately requires dicing to providesingulated silicon bridge dies. As an example, FIG. 2 illustrates a planview of a portion of a silicon wafer having a plurality of siliconbridge dies fabricated thereon, in accordance with an embodiment of thepresent invention.

Referring to FIG. 2, a portion 200 of a silicon wafer includes a firstsilicon bridge die 202 and a second silicon bridge die 204 thereon. Afirst metal guard ring 206 or 208 surrounds an active region 210 or 212of the first 202 and second 204 silicon bridge dies, respectively. Asecond metal guard ring 214 or 216 surrounds the first metal guard ring206 or 208, respectively. A region 218 or 220 for various metallizationfeatures is included between the first guard ring 206 or 208 and thesecond guard ring 214 or 216, respectively, as will be described ingreater detail below. A metal-free scribe line 222 separates the first202 and second 204 silicon bridge dies, outside the second guard rings214 or 216, respectively. It is noted that in FIG. 2, only two siliconbridge dies are depicted. However, it is to be appreciated that a waferor reticle can include a greater number of silicon bridge dies dependingupon the wafer or reticle size and depending on the die size.

In an embodiment, the active die region 210 or 212 of FIG. 2 include allof the signal and power/ground interconnects, allowing metal-free scribeline 222 in the dicing streets between dies. As a more detailed example,FIG. 3 illustrates an exemplary layout for adjacent silicon bridge dieson a common substrate or wafer, in accordance with an embodiment of thepresent invention.

Referring to FIG. 3, a portion 300 of a layout for a plurality ofsilicon bridge dies on a common wafer or reticle is depicted. Theportion 300 shown includes portions of first and second silicon bridgedies 302 and 304. An outer edge 306 or 308 for each of the dies 302 or304, respectively, is also depicted. It is to be appreciated that thefull scale layout includes the outer edge surrounding the entire outerperiphery of the first and second dies 302 and 304. Each of the outeredges 306 and 308 includes an inner metal guard ring 310 and an outermetal guard ring 312. In a particular embodiment, each guard ring has awidth (W1) of approximately 2 microns, and the spacing between the innermetal guard ring 310 and the outer metal guard ring 312 is approximatelyin the range of 60-70 microns.

Metal features may be included between the inner metal guard ring 310and the outer metal guard ring 312. For example, in one embodiment,staggered dummy metal features 314 (also referred to herein as miniguard rings) are included between the inner metal guard ring 310 and theouter metal guard ring 312 (as described in association with FIG. 4). Inone embodiment, lithographic alignment marks 316 are included betweenthe inner metal guard ring 310 and the outer metal guard ring 312. In anembodiment, a metal-free scribe line 318 is between the outer guardrings 312 of adjacent dies 302 and 304. In a particular such embodiment,the metal-free scribe line 318 has a width (W2) approximately in therange of 40-50 microns.

Referring again to FIG. 3, in an embodiment, such a dual guard ringframe design for each die 302 and 304 enables a saw-only die singulationprocess for silicon bridge technology. The metal-free scribe line 318width is suitable to permit a saw blade cut silicon and dielectriclayers (such as silicon oxide layers) without contacting copper (Cu)metal features. In an embodiment, as described above, the inner metalguard ring 310 and the outer metal guard ring 312 are spaced bystaggered mini guard rings for maximum protection. Additionally, in anembodiment, the inner metal guard ring 310 and the outer metal guardring 312 provide a hermetic seal for electrical routing included in theso-called “active” region of the dies 302 and 304.

As described above, the guard ring designs described herein may besuitable for arresting propagation of a crack formed during or aftersingulation of a plurality of silicon bridge dies on a common wafer orreticle. In an example, FIG. 4 illustrates a magnified plan view of aportion of a silicon bridge die including a crack formed therein, inaccordance with an embodiment of the present invention.

Referring to FIG. 4, a portion 400 of die is depicted showing a die edge402. The die edge 402 is the end of the die during/after singulation. Adual metal guard ring structure includes an outer guard ring 406 and aninner guard ring 408. A metal-free zone 404 is included between the dieedge 402 and the outer guard ring 406. The guard rings protect “active”area 410 of die 400, which includes metallization/routing, e.g., fordie-die communication through silicon bridge die 410. Dummy metalfeatures 412, such as “mini” guard rings, included between guard rings406 and 408. Although not depicted, other features such as alignmentmarks, may be included between guard rings 406 and 408. In accordancewith an embodiment of the present invention, a die crack 414 formsduring or after die singulation. As shown, die crack 414 can beinitiated from the die edge 402. The die crack 414 can be stopped by theouter guard ring 406. However, if not arrested by the outer guard ring406, the crack is ultimately arrested by the dummy metal features 412before reaching inner guard ring 408. That is, in an embodiment, crackpropagation is minimized with the dual metal guard ring frame design,which may be applicable for a saw-only singulation process forsingulating silicon bridge dies.

A dual guard ring structure may be fabricated from a plurality of layersof a metallization structure, such as from a plurality of alternatingmetal lines and vias. As an example, FIG. 5 illustrates across-sectional view of a guard ring of a dual guard ring structure, inaccordance with an embodiment of the present invention. FIG. 6illustrates a cross-sectional view of a dual guard ring structure, inaccordance with an embodiment of the present invention.

Referring to FIGS. 5 and 6 collectively, in an embodiment, asemiconductor structure 500 (such as a silicon bridge) includes asubstrate 502 having an insulating layer disposed thereon 504. Thesubstrate has a perimeter 506, an outer most portion of which isdepicted on the right-hand side of FIG. 6. A metallization structure 508is disposed on the insulating layer 504. The metallization structure 508includes conductive routing 510 disposed in a dielectric material stack512.

A first metal guard ring 514 is disposed in the dielectric materialstack 512 and surrounds the conductive routing 510. A second metal guardring 516 (only shown in FIG. 6) is disposed in the dielectric materialstack 512 and surrounds the first metal guard ring 514. A metal-freeregion 518 of the dielectric material stack 512 surrounds the secondmetal guard ring 516 (only shown in FIG. 6). The metal-free region 516is disposed adjacent to the second metal guard ring 516 and adjacent tothe perimeter 506 of the substrate 502.

In one embodiment, at least one of the first metal guard ring or thesecond metal guard ring 514 or 516 provides a hermetic seal for themetallization structure 508. In one embodiment, the semiconductorstructure includes metal features 519 disposed in the dielectricmaterial stack, between the first metal guard ring 514 and the secondmetal guard ring 516. Additionally, an e-test pad 520 may be includedbetween the first metal guard ring 514 and the second metal guard ring516, as is depicted in FIG. 6. Thus, the metal features include afeature such as, but not limited to, an alignment mark, a dummy feature,or a test feature. In one embodiment, at least one of the first metalguard ring or the second metal guard ring includes a vertical stack ofalternating metal lines and vias aligned along a common axis 599, as isdepicted in FIG. 5. In one embodiment, an uppermost layer of themetallization structure includes first and second pluralities ofconductive pads thereon, such as pad 522 shown in FIG. 5 (although it isto be appreciated that the pad may be omitted from the guard ringstructure even if included in the metallization of the active dieregion). In one such embodiment, the conductive routing electricallycouples the first plurality of conductive pads with the second pluralityof conductive pads. In one embodiment, the first and second pluralitiesof conductive pads include a layer of copper having a thickness ofgreater than approximately 5 microns.

In an embodiment, the substrate 502 is free from having semiconductordevices disposed therein. That is, the primary function of the siliconbridge die is to provide local and direct communication between two diescoupled to the silicon bridge die. In one embodiment, the substrate is asingle crystalline silicon substrate. In one embodiment, thesemiconductor structure further includes a crack disposed in themetal-free region of the dielectric material stack and propagatingthrough the second metal guard ring but not through the first metalguard ring, as was described above in association with FIG. 4.

Although the above describe embodiments are directed to two individualdies coupled to one another by a silicon bridge or EMIB, it is to beappreciated that complex structure may also benefit from embodimentsdescribed herein. In a first example, FIG. 7 illustrates across-sectional view of a semiconductor package including multiple diecoupled with an embedded multi-die interconnect bridge (EMIB) inaccordance with an embodiment of the present invention. Referring toFIG. 7, the semiconductor package 700 includes a first die 752 (such asa logic die central processing unit, CPU) and a memory die stack 754.The first die 752 and the memory die stack 754 are coupled to an EMIB756 through bumps 758 and 760 of the first die 752 and the memory diestack 754, respectively, e.g., by thermal compression bonding (TCB). TheEMIB 756 is embedded in a substrate (e.g., a flexible organic substrate)or board (such as an epoxy PCB material) material 770. An underfillmaterial 799 may be included between the first die 752 and the EMIB756/substrate 770 interface and between the memory die stack 754 and theEMIB 756/substrate 770 interface, as is depicted in FIG. 7. In anembodiment, the EMIB 756 includes a dual metal guard ring surrounded bya metal free portion outside of the outermost metal guard ring, asdescribed above.

In a second example, FIG. 8 illustrates a plan view of a package layoutfor co-packaged high performance computing (HPC) die and high bandwidthmemory (HBM) layout, in accordance with an embodiment of the presentinvention. Referring to FIG. 8, a package layout 800 includes a commonsubstrate 802. A central processing unit or system-on-chip (CPU/SoC) die804 is supported by the substrate 802 along with eight memory dies 806.A plurality of EMIBs 808 bridge the memory dies 806 to the CPU/SoC die804 by C4 connections 810. The die-to-die spacing 812 is approximately100-200 microns. It is to be appreciated that, from a top-down viewperspective, the dies 804 and 806 are disposed above the C4 connections810, which are disposed above the EMIBs 808, which are included in thesubstrate 802. In an embodiment, one or more of the EMIBs 808 includes adual metal guard ring surrounded by a metal free portion outside of theoutermost metal guard ring, as described above.

As described above, in an embodiment, a substrate for a silicon bridgemay be a single crystalline silicon substrate. In other embodiments, andstill in the context of a “silicon bridge,” the substrate may becomposed of a multi- or single-crystal of a material which may include,but is not limited to, germanium, silicon-germanium or a Group III-Vcompound semiconductor material. In another embodiment, a glasssubstrate is used.

Referencing the above description regarding silicon bridge technology,in an embodiment, an insulating, dielectric or interlayer dielectric(ILD) material is one such as, but not limited to, oxides of silicon(e.g., silicon dioxide (SiO₂)), doped oxides of silicon, fluorinatedoxides of silicon, carbon doped oxides of silicon, various low-kdielectric materials known in the arts, and combinations thereof. Theinsulating, dielectric or interlayer dielectric (ILD) material may beformed by conventional techniques, such as, for example, chemical vapordeposition (CVD), physical vapor deposition (PVD), or by otherdeposition methods.

Referencing the above description regarding silicon bridge technology,in an embodiment, interconnect or conductive routing material iscomposed of one or more metal or other conductive structures. A commonexample is the use of copper lines and structures (such as vias) thatmay or may not include barrier layers between the copper and surroundingILD material. As used herein, the term metal includes alloys, stacks,and other combinations of multiple metals. For example, the metalinterconnect lines may include barrier layers, stacks of differentmetals or alloys, etc. The interconnect lines or conductive routing arealso sometimes referred to in the arts as traces, wires, lines, metal,or simply interconnects.

As described above, a plurality of silicon bridge dies may be fabricatedfrom a common wafer. In an example, FIG. 9 is a flowchart 900illustrating operations in a method of fabricating a plurality ofsilicon bridge dies, in accordance with an embodiment of the presentinvention.

Referring to operation 902 of flowchart 900, a method of fabricating aplurality of silicon bridge dies includes providing a wafer having aplurality of silicon bridge dies thereon. Each of the plurality ofsilicon bridge dies is separated from one another by metal-free scribelines. In an embodiment, each of the plurality of silicon bridge dieshas an uppermost metal layer having a thickness of greater thanapproximately 5 microns within a dual metal guard ring.

Referring to operation 904 of flowchart 900, the method of fabricatingthe plurality of silicon bridge dies includes singulating the pluralityof silicon bridge dies by sawing the metal-free scribe lines of thewafer. In accordance with an embodiment of the present invention, eachof the plurality of silicon bridge dies is protected by the dual metalguard ring during the sawing.

In one embodiment, singulating the plurality of silicon bridge diesinvolves leaving a portion of the metal-free scribe lines to remain as aportion of each of the singulated plurality of silicon bridge dies. Inone embodiment, at least one of the metal guard rings of the dual metalguard ring provides a hermetic seal for each of the plurality of siliconbridge dies during the sawing. In one embodiment, a crack is formedduring the sawing the metal-free scribe lines of the wafer. In aparticular embodiment, the crack propagates through an outermost metalguard ring of the dual metal guard ring but not through an inner mostmetal guard ring of the dual metal guard ring, even subsequent to thesawing process. This, in an embodiment, a dual metal guard ring designhaving a metal-free outermost region enables a saw-only die singulationprocess for silicon bridge technologies. The metal free zone is providedin the scribe area and the dual guard ring with mini guard ring metaldummification may be implemented to provide maximum protection forpotential die crack during or after die singulation.

FIG. 10 is a schematic of a computer system 1000, in accordance with anembodiment of the present invention. The computer system 1000 (alsoreferred to as the electronic system 1000) as depicted can embody asilicon bridge having a metal-free frame design, according to any of theseveral disclosed embodiments and their equivalents as set forth in thisdisclosure. The computer system 1000 may be a mobile device such as anetbook computer. The computer system 1000 may be a mobile device suchas a wireless smart phone. The computer system 1000 may be a desktopcomputer. The computer system 1000 may be a hand-held reader. Thecomputer system 1000 may be a server system. The computer system 1000may be a supercomputer or high-performance computing system.

In an embodiment, the electronic system 1000 is a computer system thatincludes a system bus 1020 to electrically couple the various componentsof the electronic system 1000. The system bus 1020 is a single bus orany combination of busses according to various embodiments. Theelectronic system 1000 includes a voltage source 1030 that providespower to the integrated circuit 1010. In some embodiments, the voltagesource 1030 supplies current to the integrated circuit 1010 through thesystem bus 1020.

The integrated circuit 1010 is electrically coupled to the system bus1020 and includes any circuit, or combination of circuits according toan embodiment. In an embodiment, the integrated circuit 1010 includes aprocessor 1012 that can be of any type. As used herein, the processor1012 may mean any type of circuit such as, but not limited to, amicroprocessor, a microcontroller, a graphics processor, a digitalsignal processor, or another processor. In an embodiment, the processor1012 includes, or is coupled with, a silicon bridge having a metal-freeframe design, as disclosed herein. In an embodiment, SRAM embodimentsare found in memory caches of the processor. Other types of circuitsthat can be included in the integrated circuit 1010 are a custom circuitor an application-specific integrated circuit (ASIC), such as acommunications circuit 1014 for use in wireless devices such as cellulartelephones, smart phones, pagers, portable computers, two-way radios,and similar electronic systems, or a communications circuit for servers.In an embodiment, the integrated circuit 1010 includes on-die memory1016 such as static random-access memory (SRAM). In an embodiment, theintegrated circuit 1010 includes embedded on-die memory 1016 such asembedded dynamic random-access memory (eDRAM).

In an embodiment, the integrated circuit 1010 is complemented with asubsequent integrated circuit 1011. Useful embodiments include a dualprocessor 1013 and a dual communications circuit 1015 and dual on-diememory 1017 such as SRAM. In an embodiment, the dual integrated circuit1010 includes embedded on-die memory 1017 such as eDRAM.

In an embodiment, the electronic system 1000 also includes an externalmemory 1040 that in turn may include one or more memory elementssuitable to the particular application, such as a main memory 1042 inthe form of RAM, one or more hard drives 1044, and/or one or more drivesthat handle removable media 1046, such as diskettes, compact disks(CDs), digital variable disks (DVDs), flash memory drives, and otherremovable media known in the art. The external memory 1040 may also beembedded memory 1048 such as the first die in a die stack, according toan embodiment.

In an embodiment, the electronic system 1000 also includes a displaydevice 1050, an audio output 1060. In an embodiment, the electronicsystem 1000 includes an input device such as a controller 1070 that maybe a keyboard, mouse, trackball, game controller, microphone,voice-recognition device, or any other input device that inputsinformation into the electronic system 1000. In an embodiment, an inputdevice 1070 is a camera. In an embodiment, an input device 1070 is adigital sound recorder. In an embodiment, an input device 1070 is acamera and a digital sound recorder.

As shown herein, the integrated circuit 1010 can be implemented in anumber of different embodiments, including a package substrate having asilicon bridge having a metal-free frame design, according to any of theseveral disclosed embodiments and their equivalents, an electronicsystem, a computer system, one or more methods of fabricating anintegrated circuit, and one or more methods of fabricating an electronicassembly that includes a package substrate having a silicon bridgehaving a metal-free frame design, according to any of the severaldisclosed embodiments as set forth herein in the various embodiments andtheir art-recognized equivalents. The elements, materials, geometries,dimensions, and sequence of operations can all be varied to suitparticular I/O coupling requirements including array contact count,array contact configuration for a microelectronic die embedded in aprocessor mounting substrate according to any of the several disclosedpackage substrates having a silicon bridge having a metal-free framedesign embodiments and their equivalents. A foundation substrate may beincluded, as represented by the dashed line of FIG. 10. Passive devicesmay also be included, as is also depicted in FIG. 10.

Embodiments of the present invention include metal-free frame designsfor silicon bridges for semiconductor packages and the resulting siliconbridges and semiconductor packages.

In an embodiment, a semiconductor structure includes a substrate havingan insulating layer disposed thereon, the substrate having a perimeter.A metallization structure is disposed on the insulating layer, themetallization structure including conductive routing disposed in adielectric material stack. A first metal guard ring is disposed in thedielectric material stack and surrounds the conductive routing. A secondmetal guard ring is disposed in the dielectric material stack andsurrounds the first metal guard ring. A metal-free region of thedielectric material stack surrounds the second metal guard ring. Themetal-free region is disposed adjacent to the second metal guard ringand adjacent to the perimeter of the substrate.

In one embodiment, at least one of the first metal guard ring or thesecond metal guard ring provides a hermetic seal for the metallizationstructure.

In one embodiment, the semiconductor structure includes metal featuresdisposed in the dielectric material stack, between the first metal guardring and the second metal guard ring. The metal features include afeature selected from the group consisting of an alignment mark, a dummyfeature, and a test feature.

In one embodiment, at least one of the first metal guard ring or thesecond metal guard ring includes a vertical stack of alternating metallines and vias aligned along a common axis.

In one embodiment, an uppermost layer of the metallization structureincludes first and second pluralities of conductive pads thereon.

In one embodiment, the conductive routing electrically couples the firstplurality of conductive pads with the second plurality of conductivepads.

In one embodiment, the first and second pluralities of conductive padsinclude a layer of copper having a thickness of greater thanapproximately 5 microns.

In one embodiment, the substrate is free from having semiconductordevices disposed therein.

In one embodiment, the substrate is a single crystalline siliconsubstrate.

In one embodiment, the semiconductor structure further includes a crackdisposed in the metal-free region of the dielectric material stack andpropagating through the second metal guard ring but not through thefirst metal guard ring.

In an embodiment, a method of fabricating a plurality of silicon bridgedies includes providing a wafer having a plurality of silicon bridgedies thereon. Each of the plurality of silicon bridge dies is separatedfrom one another by metal-free scribe lines. The method also includessingulating the plurality of silicon bridge dies by sawing themetal-free scribe lines of the wafer. Each of the plurality of siliconbridge dies is protected by a dual metal guard ring during the sawing.

In one embodiment, singulating the plurality of silicon bridge diesinvolves providing a plurality of silicon bridge dies having anuppermost metal layer having a thickness of greater than approximately 5microns within the dual metal guard ring.

In one embodiment, singulating the plurality of silicon bridge diesinvolves leaving a portion of the metal-free scribe lines to remain as aportion of each of the singulated plurality of silicon bridge dies.

In one embodiment, at least one of the metal guard rings of the dualmetal guard ring provides a hermetic seal for each of the plurality ofsilicon bridge dies during the sawing.

In one embodiment, sawing the metal-free scribe lines of the waferfurther involves forming a crack in one of the metal-free scribe lines,the crack propagating through an outermost metal guard ring of the dualmetal guard ring but not through an inner most metal guard ring of thedual metal guard ring.

In an embodiment, a semiconductor package includes an embedded multi-dieinterconnect bridge (EMIB) including a silicon bridge disposed within asemiconductor package substrate. The silicon bridge includes a siliconsubstrate having an insulating layer disposed thereon, the siliconsubstrate having a perimeter. A metallization structure is disposed onthe insulating layer, the metallization structure including conductiverouting disposed in a dielectric material stack. A first metal guardring is disposed in the dielectric material stack and surrounds theconductive routing. A second metal guard ring is disposed in thedielectric material stack and surrounds the first metal guard ring. Ametal-free region of the dielectric material stack surrounds the secondmetal guard ring. The metal-free region is disposed adjacent to thesecond metal guard ring and adjacent to the perimeter of the siliconsubstrate. The semiconductor package also includes first and secondadjacent semiconductor dies disposed on the semiconductor packagesubstrate and electrically coupled to one another by the conductiverouting of the metallization structure of the silicon bridge.

In one embodiment, the first semiconductor die is a memory die, and thesecond semiconductor die is a logic die.

In one embodiment, at least one of the first metal guard ring or thesecond metal guard ring of the silicon bridge provides a hermetic sealfor the metallization structure of the silicon bridge.

In one embodiment, the silicon bridge further includes metal featuresdisposed in the dielectric material stack, between the first metal guardring and the second metal guard ring, the metal features including afeature such as, but not limited to, an alignment mark, a dummy feature,or a test feature.

In one embodiment, at least one of the first metal guard ring or thesecond metal guard ring of the silicon bridge includes a vertical stackof alternating metal lines and vias aligned along a common axis.

In one embodiment, an uppermost layer of the metallization structure ofthe silicon bridge includes first and second pluralities of conductivepads thereon. The first semiconductor die is attached to the firstplurality of conductive pads, and the second semiconductor die isattached to the second plurality of conductive pads.

In one embodiment, the conductive routing of the silicon bridgeelectrically couples the first plurality of conductive pads with thesecond plurality of conductive pads.

In one embodiment, the first and second pluralities of conductive padsof the silicon bridge include a layer of copper having a thickness ofgreater than approximately 5 microns.

In one embodiment, the silicon substrate is free from havingsemiconductor devices disposed therein.

In one embodiment, the silicon bridge further includes a crack disposedin the metal-free region of the dielectric material stack of the siliconbridge and propagating through the second metal guard ring but notthrough the first metal guard ring of the silicon bridge.

What is claimed is:
 1. A semiconductor structure, comprising: asubstrate having an insulating layer disposed thereon, the substratehaving a perimeter; a metallization structure disposed on the insulatinglayer, the metallization structure comprising conductive routingdisposed in a dielectric material stack, wherein an uppermost layer ofthe metallization structure comprises first and second pluralities ofconductive pads thereon; a first metal guard ring disposed in thedielectric material stack and surrounding the conductive routing; asecond metal guard ring disposed in the dielectric material stack andsurrounding the first metal guard ring; and a metal-free region of thedielectric material stack surrounding the second metal guard ring, themetal-free region disposed adjacent to the second metal guard ring andadjacent to the perimeter of the substrate.
 2. The semiconductorstructure of claim 1, wherein at least one of the first metal guard ringor the second metal guard ring provides a hermetic seal for themetallization structure.
 3. The semiconductor structure of claim 1,further comprising: metal features disposed in the dielectric materialstack, between the first metal guard ring and the second metal guardring, the metal features comprising a feature selected from the groupconsisting of an alignment mark, a dummy feature, and a test feature. 4.The semiconductor device of claim 1, wherein at least one of the firstmetal guard ring or the second metal guard ring comprises a verticalstack of alternating metal lines and vias aligned along a common axis.5. The semiconductor structure of claim 1, wherein the conductiverouting electrically couples the first plurality of conductive pads withthe second plurality of conductive pads.
 6. The semiconductor structureof claim 1, wherein the first and second pluralities of conductive padscomprise a layer of copper having a thickness of greater thanapproximately 5 microns.
 7. The semiconductor structure of claim 1,wherein the substrate is free from having semiconductor devices disposedtherein.
 8. The semiconductor structure of claim 1, wherein thesubstrate is a single crystalline silicon substrate.
 9. Thesemiconductor structure of claim 1, further comprising: a crack disposedin the metal-free region of the dielectric material stack andpropagating through the second metal guard ring but not through thefirst metal guard ring.
 10. A semiconductor package, comprising: anembedded interconnection bridge (EMIB) comprising a silicon bridgedisposed within a semiconductor package substrate, the silicon bridgecomprising: a silicon substrate having an insulating layer disposedthereon, the silicon substrate having a perimeter; a metallizationstructure disposed on the insulating layer, the metallization structurecomprising conductive routing disposed in a dielectric material stack; afirst metal guard ring disposed in the dielectric material stack andsurrounding the conductive routing; a second metal guard ring disposedin the dielectric material stack and surrounding the first metal guardring; and a metal-free region of the dielectric material stacksurrounding the second metal guard ring, the metal-free region disposedadjacent to the second metal guard ring and adjacent to the perimeter ofthe silicon substrate; and first and second adjacent semiconductor diesdisposed on the semiconductor package substrate and electrically coupledto one another by the conductive routing of the metallization structureof the silicon bridge.
 11. The semiconductor package of claim 10,wherein the first semiconductor die is a memory die, and the secondsemiconductor die is a logic die.
 12. The semiconductor package of claim10, wherein at least one of the first metal guard ring or the secondmetal guard ring of the silicon bridge provides a hermetic seal for themetallization structure of the silicon bridge.
 13. The semiconductorpackage of claim 10, the silicon bridge further comprising: metalfeatures disposed in the dielectric material stack, between the firstmetal guard ring and the second metal guard ring, the metal featurescomprising a feature selected from the group consisting of an alignmentmark, a dummy feature, and a test feature.
 14. The semiconductor packageof claim 10, wherein at least one of the first metal guard ring or thesecond metal guard ring of the silicon bridge comprises a vertical stackof alternating metal lines and vias aligned along a common axis.
 15. Thesemiconductor package of claim 10, wherein an uppermost layer of themetallization structure of the silicon bridge comprises first and secondpluralities of conductive pads thereon, wherein the first semiconductordie is attached to the first plurality of conductive pads, and whereinthe second semiconductor die is attached to the second plurality ofconductive pads.
 16. The semiconductor package of claim 15, wherein theconductive routing of the silicon bridge electrically couples the firstplurality of conductive pads with the second plurality of conductivepads.
 17. The semiconductor package of claim 15, wherein the first andsecond pluralities of conductive pads of the silicon bridge comprise alayer of copper having a thickness of greater than approximately 5microns.
 18. The semiconductor package of claim 10, wherein the siliconsubstrate is free from having semiconductor devices disposed therein.19. The semiconductor package of claim 10, the silicon bridge furthercomprising: a crack disposed in the metal-free region of the dielectricmaterial stack of the silicon bridge and propagating through the secondmetal guard ring but not through the first metal guard ring of thesilicon bridge.
 20. A semiconductor structure, comprising: a substratehaving an insulating layer disposed thereon, the substrate having aperimeter; a metallization structure disposed on the insulating layer,the metallization structure comprising conductive routing disposed in adielectric material stack; a first metal guard ring disposed in thedielectric material stack and surrounding the conductive routing; asecond metal guard ring disposed in the dielectric material stack andsurrounding the first metal guard ring; a metal-free region of thedielectric material stack surrounding the second metal guard ring, themetal-free region disposed adjacent to the second metal guard ring andadjacent to the perimeter of the substrate; and metal features disposedin the dielectric material stack, between the first metal guard ring andthe second metal guard ring, the metal features comprising a featureselected from the group consisting of an alignment mark, a dummyfeature, and a test feature.
 21. The semiconductor structure of claim20, wherein the substrate is free from having semiconductor devicesdisposed therein.
 22. The semiconductor structure of claim 21, whereinan uppermost layer of the metallization structure comprises first andsecond pluralities of conductive pads thereon.
 23. The semiconductordevice of claim 20, wherein at least one of the first metal guard ringor the second metal guard ring comprises a vertical stack of alternatingmetal lines and vias aligned along a common axis.
 24. A semiconductorstructure, comprising: a substrate having an insulating layer disposedthereon, the substrate having a perimeter, wherein the substrate is freefrom having semiconductor devices disposed therein; a metallizationstructure disposed on the insulating layer, the metallization structurecomprising conductive routing disposed in a dielectric material stack; afirst metal guard ring disposed in the dielectric material stack andsurrounding the conductive routing; a second metal guard ring disposedin the dielectric material stack and surrounding the first metal guardring; and a metal-free region of the dielectric material stacksurrounding the second metal guard ring, the metal-free region disposedadjacent to the second metal guard ring and adjacent to the perimeter ofthe substrate.
 25. The semiconductor device of claim 24, wherein atleast one of the first metal guard ring or the second metal guard ringcomprises a vertical stack of alternating metal lines and vias alignedalong a common axis.